CSD87313DMST Texas Instruments - Yeehing Electronics

30-V, N channel NexFET™ power MOSFET, dual common drain SON 3 mm x 3 mm, 5.5 mOhm

Pricing (USD)

Quantity	Unit Price
1 — 99	1.561
100 — 249	1.289
250 — 999	0.926
1,000 +	0.41

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	E
Technology	Si
Mounting Style	SMD/SMT
Package / Case	WSON-8
Number of Channels	2 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	17 A
Rds On - Drain-Source Resistance	5.5 mOhms
Vgs th - Gate-Source Threshold Voltage	600 mV
Vgs - Gate-Source Voltage	10 V
Qg - Gate Charge	28 nC, 28 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2.7 W
Configuration	Dual
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Series	CSD87313DMS
Transistor Type	2 N-Channel
Brand	Texas Instruments
Forward Transconductance - Min	149 S, 149 S
Fall Time	13 ns, 13 ns
Product Type	MOSFET
Rise Time	27 ns, 27 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	41 ns, 41 ns
Typical Turn-On Delay Time	9 ns, 9 ns

For more information, please refer to datasheet

Documents

CSD87313DMST Datasheet

More Information

The CSD87313DMS is a 30-V common drain, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3-mm × 3.3-mm device has low-source-to-source on resistance that minimizes losses and offers low-component count for space constrained applications.