CSD87313DMST


YeeHing #: Y012-CSD87313DMST
Inventory: 2800

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Description

CSD87313DMST Texas Instruments - Yeehing Electronics

30-V, N channel NexFET™ power MOSFET, dual common drain SON 3 mm x 3 mm, 5.5 mOhm

Pricing (USD)

Quantity Unit Price
1 — 99 1.561
100 — 249 1.289
250 — 999 0.926
1,000 + 0.41

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS E
Technology Si
Mounting Style SMD/SMT
Package / Case WSON-8
Number of Channels 2 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 17 A
Rds On - Drain-Source Resistance 5.5 mOhms
Vgs th - Gate-Source Threshold Voltage 600 mV
Vgs - Gate-Source Voltage 10 V
Qg - Gate Charge 28 nC, 28 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2.7 W
Configuration Dual
Channel Mode Enhancement
Tradename NexFET
Packaging Reel
Series CSD87313DMS
Transistor Type 2 N-Channel
Brand Texas Instruments
Forward Transconductance - Min 149 S, 149 S
Fall Time 13 ns, 13 ns
Product Type MOSFET
Rise Time 27 ns, 27 ns
Factory Pack Quantity 250
Subcategory MOSFETs
Typical Turn-Off Delay Time 41 ns, 41 ns
Typical Turn-On Delay Time 9 ns, 9 ns

For more information, please refer to datasheet

Documents

CSD87313DMST Datasheet

More Information

The CSD87313DMS is a 30-V common drain, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3-mm × 3.3-mm device has low-source-to-source on resistance that minimizes losses and offers low-component count for space constrained applications.

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