Description
CSD87333Q3D Texas Instruments - Yeehing Electronics
30-V, N channel synchronous buck NexFET™ power MOSFET, SON 3 mm x 3 mm power block, 15 A
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 0.897 |
100 — 249 | 0.69 |
250 — 999 | 0.508 |
1,000 + | 0.25 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | MOSFET |
RoHS | E |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | VSON-8 |
Number of Channels | 2 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 15 A |
Rds On - Drain-Source Resistance | 14.3 mOhms |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Vgs - Gate-Source Voltage | 8 V |
Qg - Gate Charge | 3.5 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 1.5 W |
Configuration | Dual |
Channel Mode | Enhancement |
Tradename | NexFET |
Packaging | Reel |
Height | 1 mm |
Length | 3.3 mm |
Series | CSD87333Q3D |
Transistor Type | 2 N-Channel |
Width | 3.3 mm |
Brand | Texas Instruments |
Forward Transconductance - Min | 43 S |
Fall Time | 2.2 ns |
Product Type | MOSFET |
Rise Time | 3.9 ns |
Factory Pack Quantity | 2500 |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 9.4 ns |
Typical Turn-On Delay Time | 2.1 ns |
Unit Weight | 0.000727 oz |
For more information, please refer to datasheet
Documents
CSD87333Q3D Datasheet |
More Information
The CSD87333Q3D NexFET™ power block is an optimized design for synchronous buck and boost applications offering high-current, high-efficiency, and high-frequency capability in a small 3.3-mm × 3.3-mm outline. Optimized for 5-V gate drive applications, this product offers a flexible solution in high-duty cycle applications when paired with an external controller or driver.