CSD87334Q3DT Texas Instruments - Yeehing Electronics

30-V, N channel synchronous buck NexFET™ power MOSFET, SON 3 mm x 3 mm power block, 20 A

Pricing (USD)

Quantity	Unit Price
1 — 99	1.221
100 — 249	1.008
250 — 999	0.724
1,000 +	0.38

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	E
Technology	Si
Mounting Style	SMD/SMT
Package / Case	VSON-8
Number of Channels	2 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	20 A
Rds On - Drain-Source Resistance	8.3 mOhms, 8.3 mOhms
Vgs th - Gate-Source Threshold Voltage	750 mV
Vgs - Gate-Source Voltage	8 V
Qg - Gate Charge	8.3 nC, 8.3 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	6 W
Configuration	Dual
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Height	1 mm
Length	3.3 mm
Series	CSD87334Q3D
Width	3.3 mm
Brand	Texas Instruments
Forward Transconductance - Min	62 S
Development Kit	VSON
Fall Time	17 ns, 17 ns
Product Type	MOSFET
Rise Time	7 ns, 7 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	11 ns, 11 ns
Typical Turn-On Delay Time	4 ns, 4 ns
Unit Weight	0.002677 oz

For more information, please refer to datasheet

Documents

CSD87334Q3DT Datasheet

More Information

The CSD87334Q3D NexFET™ power block is an optimized design for synchronous buck and boost applications offering high-current, high-efficiency, and high-frequency capability in a small 3.3 mm × 3.3 mm outline. Optimized for 5-V gate drive applications, this product offers a flexible solution in high-duty cycle applications when paired with an external controller or driver.