CSD87501L


YeeHing #: Y012-CSD87501L
Inventory: 8200

Feel free to reach out to us for more information.
Click the button below to unveil exclusive discounts and delightful surprises.

Description

CSD87501L Texas Instruments - Yeehing Electronics

30-V, N channel NexFET™ power MOSFET, dual common drain LGA, 5.5 mOhm, gate ESD protection

Pricing (USD)

Quantity Unit Price
1 — 99 0.694
100 — 249 0.534
250 — 999 0.393
1,000 + 0.20

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS Y
Technology Si
Mounting Style SMD/SMT
Package / Case BGA-10
Number of Channels 2 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 14 A
Rds On - Drain-Source Resistance 4.6 mOhms
Vgs th - Gate-Source Threshold Voltage 1.3 V
Vgs - Gate-Source Voltage 20 V
Qg - Gate Charge 40 nC, 40 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2.5 W
Configuration Dual
Channel Mode Enhancement
Tradename NexFET
Packaging Reel
Height 0.2 mm
Length 3.37 mm
Series CSD87501L
Transistor Type 2 N-Channel
Width 1.47 mm
Brand Texas Instruments
Forward Transconductance - Min 48 S, 48 S
Fall Time 712 ns, 712 ns
Product Type MOSFET
Rise Time 260 ns, 260 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Typical Turn-Off Delay Time 709 ns, 709 ns
Typical Turn-On Delay Time 164 ns, 164 ns
Unit Weight 0.000109 oz

For more information, please refer to datasheet

Documents

CSD87501L Datasheet

More Information

This 30-V, 6.6-mΩ, 3.37-mm × 1.47-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small size and common drain configuration make the device ideal for multi-cell battery pack applications and small handheld devices.

You may also like

Recently viewed