Texas Instruments
CSD87501LT
CSD87501LT
Regular price
$0.27 USD
Regular price
Sale price
$0.27 USD
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CSD87501LT Texas Instruments - Yeehing Electronics
30-V, N channel NexFET™ power MOSFET, dual common drain LGA, 5.5 mOhm, gate ESD protection
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.832 |
| 100 — 249 | 0.64 |
| 250 — 999 | 0.471 |
| 1,000 + | 0.27 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | BGA-10 |
| Number of Channels | 2 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 14 A |
| Rds On - Drain-Source Resistance | 4.6 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1.3 V |
| Vgs - Gate-Source Voltage | 20 V |
| Qg - Gate Charge | 15 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 2.5 W |
| Configuration | Dual |
| Tradename | NexFET |
| Packaging | Reel |
| Height | 0.2 mm |
| Length | 3.37 mm |
| Series | CSD87501L |
| Transistor Type | 2 N-Channel |
| Width | 1.47 mm |
| Brand | Texas Instruments |
| Fall Time | 712 ns |
| Product Type | MOSFET |
| Rise Time | 260 ns |
| Factory Pack Quantity | 250 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 709 ns |
| Typical Turn-On Delay Time | 164 ns |
| Unit Weight | 0.000109 oz |
For more information, please refer to datasheet
Documents
| CSD87501LT Datasheet |
More Information
This 30-V, 6.6-mΩ, 3.37-mm × 1.47-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small size and common drain configuration make the device ideal for multi-cell battery pack applications and small handheld devices.
