CSD87501LT Texas Instruments - Yeehing Electronics

30-V, N channel NexFET™ power MOSFET, dual common drain LGA, 5.5 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.832
100 — 249	0.64
250 — 999	0.471
1,000 +	0.27

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	BGA-10
Number of Channels	2 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	14 A
Rds On - Drain-Source Resistance	4.6 mOhms
Vgs th - Gate-Source Threshold Voltage	1.3 V
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	15 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2.5 W
Configuration	Dual
Tradename	NexFET
Packaging	Reel
Height	0.2 mm
Length	3.37 mm
Series	CSD87501L
Transistor Type	2 N-Channel
Width	1.47 mm
Brand	Texas Instruments
Fall Time	712 ns
Product Type	MOSFET
Rise Time	260 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	709 ns
Typical Turn-On Delay Time	164 ns
Unit Weight	0.000109 oz

For more information, please refer to datasheet

Documents

CSD87501LT Datasheet

More Information

This 30-V, 6.6-mΩ, 3.37-mm × 1.47-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small size and common drain configuration make the device ideal for multi-cell battery pack applications and small handheld devices.