CSD87503Q3ET Texas Instruments - Yeehing Electronics

30-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3 mm, 21.9 mOhm

Pricing (USD)

Quantity	Unit Price
1 — 99	1.423
100 — 249	1.094
250 — 999	0.806
1,000 +	0.40

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	VSON-8
Number of Channels	2 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	10 A
Rds On - Drain-Source Resistance	17.3 mOhms
Vgs th - Gate-Source Threshold Voltage	1.3 V
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	42.8 nC, 42.8 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	15.6 W
Configuration	Dual
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Series	CSD87503Q3E
Transistor Type	2 N-Channel
Brand	Texas Instruments
Forward Transconductance - Min	24 S, 24 S
Fall Time	8 ns, 8 ns
Product Type	MOSFET
Rise Time	40 ns, 40 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	25 ns, 25 ns
Typical Turn-On Delay Time	10 ns, 10 ns

For more information, please refer to datasheet

Documents

CSD87503Q3ET Datasheet

More Information

The CSD87503Q3E is a 30-V, 13.5-mΩ, common source, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3 × 3.3 mm device has low drain-to-drain on-resistance that minimizes losses and offers low component count for space constrained applications.