Texas Instruments
CSD87503Q3ET
CSD87503Q3ET
Regular price
$0.40 USD
Regular price
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$0.40 USD
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CSD87503Q3ET Texas Instruments - Yeehing Electronics
30-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3 mm, 21.9 mOhm
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 1.423 |
| 100 — 249 | 1.094 |
| 250 — 999 | 0.806 |
| 1,000 + | 0.40 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | VSON-8 |
| Number of Channels | 2 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 10 A |
| Rds On - Drain-Source Resistance | 17.3 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1.3 V |
| Vgs - Gate-Source Voltage | 20 V |
| Qg - Gate Charge | 42.8 nC, 42.8 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 15.6 W |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Tradename | NexFET |
| Packaging | Reel |
| Series | CSD87503Q3E |
| Transistor Type | 2 N-Channel |
| Brand | Texas Instruments |
| Forward Transconductance - Min | 24 S, 24 S |
| Fall Time | 8 ns, 8 ns |
| Product Type | MOSFET |
| Rise Time | 40 ns, 40 ns |
| Factory Pack Quantity | 250 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 25 ns, 25 ns |
| Typical Turn-On Delay Time | 10 ns, 10 ns |
For more information, please refer to datasheet
Documents
| CSD87503Q3ET Datasheet |
More Information
The CSD87503Q3E is a 30-V, 13.5-mΩ, common source, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3 × 3.3 mm device has low drain-to-drain on-resistance that minimizes losses and offers low component count for space constrained applications.
