CSD88539NDT


YeeHing #: Y012-CSD88539NDT
Inventory: 4600

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Description

CSD88539NDT Texas Instruments - Yeehing Electronics

60-V, N channel NexFET™ power MOSFET, dual SO-8, 28 mOhm

Pricing (USD)

Quantity Unit Price
1 — 99 0.714
100 — 249 0.549
250 — 999 0.404
1,000 + 0.17

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS Y
Technology Si
Mounting Style SMD/SMT
Package / Case SOIC-8
Number of Channels 2 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 11.7 A
Rds On - Drain-Source Resistance 28 mOhms
Vgs th - Gate-Source Threshold Voltage 2.6 V
Vgs - Gate-Source Voltage 20 V
Qg - Gate Charge 7.2 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2.1 W
Configuration Dual
Channel Mode Enhancement
Tradename NexFET
Packaging Reel
Height 1.75 mm
Length 4.9 mm
Series CSD88539ND
Transistor Type 2 N-Channel
Width 3.9 mm
Brand Texas Instruments
Fall Time 4 ns
Product Type MOSFET
Rise Time 9 ns
Factory Pack Quantity 250
Subcategory MOSFETs
Typical Turn-Off Delay Time 14 ns
Typical Turn-On Delay Time 5 ns
Unit Weight 0.019048 oz

For more information, please refer to datasheet

Documents

CSD88539NDT Datasheet

More Information

This dual SO-8, 60 V, 23 mΩ NexFET power MOSFET is designed to serve as a half bridge in low-current motor control applications.

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