CSD88599Q5DCT Texas Instruments - Yeehing Electronics

60-V, N channel synchronous buck NexFET™ power MOSFET, SON 5 mm x 6 mm Dual-Cool™ power block, 40 A

Pricing (USD)

Quantity	Unit Price
1 — 99	3.636
100 — 249	3.186
250 — 999	2.234
1,000 +	1.26

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	E
Technology	Si
Mounting Style	SMD/SMT
Package / Case	VSON-CLIP-22
Number of Channels	2 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	40 A
Rds On - Drain-Source Resistance	1.7 mOhms
Vgs th - Gate-Source Threshold Voltage	1.4 V
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	43 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	12 W
Configuration	Dual
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Series	CSD88599Q5DC
Brand	Texas Instruments
Fall Time	3 ns
Product Type	MOSFET
Rise Time	20 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	23 ns
Typical Turn-On Delay Time	9 ns
Unit Weight	0.003549 oz

For more information, please refer to datasheet

Documents

CSD88599Q5DCT Datasheet

More Information

The CSD88599Q5DC 60-V power block is an optimized design for high-current motor control applications, such as handheld, cordless garden and power tools. This device utilizes TI’s stacked die technology in order to minimize parasitic inductances while offering a complete half bridge in a space saving thermally enhanced DualCool™ 5-mm × 6-mm package. With an exposed metal top, this power block device allows for simple heat sink application to draw heat out through the top of the package and away from the PCB, for superior thermal performance at the higher currents demanded by many motor control applications.