Description
DRV8300DPWR Texas Instruments - Yeehing Electronics
100-V max simple 3-phase gate driver with bootstrap diodes
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.692 |
| 100 — 249 | 0.532 |
| 250 — 999 | 0.392 |
| 1,000 + | 0.22 |
The above prices are for reference only.
Specifications
For more information, please refer to datasheet
Documents
| DRV8300DPWR Datasheet |
More Information
DRV8300 is 100-V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300D generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. The DRV8300N generates the correct gate drive voltages using an external bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents.
