DRV8300NIPWR Texas Instruments - Yeehing Electronics

100-V max simple 3-phase gate driver with bootstrap diodes

Pricing (USD)

Quantity	Unit Price
1 — 99	0.618
100 — 249	0.475
250 — 999	0.35
1,000 +	0.17

The above prices are for reference only.

Specifications

For more information, please refer to datasheet

Documents

DRV8300NIPWR Datasheet

More Information

DRV8300 is 100-V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300D generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. The DRV8300N generates the correct gate drive voltages using an external bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents.