Texas Instruments
EMB1412MYE/NOPB
EMB1412MYE/NOPB
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EMB1412MYE/NOPB Texas Instruments - Yeehing Electronics
MOSFET gate driver
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 5.087 |
| 100 — 249 | 4.201 |
| 250 — 999 | 3.018 |
| 1,000 + | 1.59 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | Gate Drivers |
| RoHS | Y |
| Mounting Style | SMD/SMT |
| Package / Case | MSOP-PowerPad-8 |
| Output Current | 3 A |
| Configuration | Dual |
| Rise Time | 14 ns |
| Fall Time | 12 ns |
| Supply Voltage - Min | 3.5 V |
| Supply Voltage - Max | 14 V |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 125 C |
| Series | EMB1412 |
| Packaging | Reel |
| Features | Single Supply |
| Operating Temperature Range | - 40 C to + 125 C |
| Technology | Si |
| Brand | Texas Instruments |
| Logic Type | TTL |
| Operating Supply Voltage | 3.5 V to 14 V |
| Product Type | Gate Drivers |
| Factory Pack Quantity | 250 |
| Subcategory | PMIC - Power Management ICs |
| Unit Weight | 0.000861 oz |
For more information, please refer to datasheet
Documents
| EMB1412MYE/NOPB Datasheet |
More Information
The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
