Texas Instruments
INA215CIRSWT
INA215CIRSWT
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INA215CIRSWT Texas Instruments - Yeehing Electronics
26V, bi-directional, high-precision current sense amplifier
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | None |
| 100 — 249 | None |
| 250 — 999 | None |
| 1,000 + | None |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | Current Sense Amplifiers |
| RoHS | Y |
| Series | INA215 |
| Number of Channels | 1 Channel |
| GBP - Gain Bandwidth Product | 40 kHz |
| Vcm - Common Mode Voltage | - 0.1 V to 26 V |
| CMRR - Common Mode Rejection Ratio | 105 dB |
| Ib - Input Bias Current | 35 uA |
| Vos - Input Offset Voltage | 1 uV |
| Supply Voltage - Max | 26 V |
| Supply Voltage - Min | 2.7 V |
| Operating Supply Current | 65 uA |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 125 C |
| Mounting Style | SMD/SMT |
| Package / Case | UQFN-10 |
| Packaging | Reel |
| Amplifier Type | Current Sense |
| Product | Current Sense Amplifiers |
| Brand | Texas Instruments |
| Shutdown | No Shutdown |
| Topology | Zero-Drift |
| Development Kit | INA210-215EVM |
| en - Input Voltage Noise Density | 25 nV/sqrt Hz |
| Gain Error | 0.02 % |
| Gain V/V | 75 V/V |
| Ios - Input Offset Current | 0.02 uA |
| Product Type | Current Sense Amplifiers |
| SR - Slew Rate | 0.4 V/us |
| Factory Pack Quantity | 250 |
| Subcategory | Amplifier ICs |
| Unit Weight | 0.000092 oz |
For more information, please refer to datasheet
Documents
| INA215CIRSWT Datasheet |
More Information
The INA21x are voltage-output, current-shunt monitors (also called current-sense amplifiers) that are commonly used for overcurrent protection, precision-current measurement for system optimization, or in closed-loop feedback circuits. This series of devices can sense drops across shunts at common-mode voltages from –0.3 V to 26 V, independent of the supply voltage. Six fixed gains are available: 50 V/V, 75 V/V, 100 V/V, 200 V/V, 500 V/V, or 1000 V/V. The low offset of the zero-drift architecture enables current sensing with maximum drops across the shunt as low as 10-mV full-scale.
