Texas Instruments
LF356H
LF356H
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LF356H Texas Instruments - Yeehing Electronics
Military-grade, single, 30-V, 5-MHz, FET-input operational amplifier
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 13.73 |
| 100 — 249 | 11.193 |
| 250 — 999 | 8.798 |
| 1,000 + | 5.22 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | Operational Amplifiers - Op Amps |
| RoHS | Y |
| Mounting Style | Through Hole |
| Package / Case | TO-99-8 |
| Supply Voltage - Max | 36 V |
| Number of Channels | 1 Channel |
| GBP - Gain Bandwidth Product | 5 MHz |
| SR - Slew Rate | 12 V/us |
| CMRR - Common Mode Rejection Ratio | 80 dB to 100 dB |
| Ib - Input Bias Current | 50 pA |
| Vos - Input Offset Voltage | 2 mV |
| Supply Voltage - Min | 10 V |
| Operating Supply Current | 5 mA |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 85 C |
| Shutdown | No Shutdown |
| Series | LF356H |
| Packaging | Bulk |
| Height | 4.45 mm |
| Input Type | Rail-to-Rail |
| Length | 9.14 mm |
| Product | Operational Amplifiers |
| Supply Type | Dual |
| Technology | BiFET |
| Width | 9.14 mm |
| Brand | Texas Instruments |
| en - Input Voltage Noise Density | 15 nV/sqrt Hz at +/- 15 V |
| In - Input Noise Current Density | 0.01 pA/sqrt Hz |
| Maximum Dual Supply Voltage | +/- 15 V |
| Operating Supply Voltage | 10 V to 36 V, +/- 5 V to +/- 18 V |
| Pd - Power Dissipation | 1000 mW |
| Product Type | Op Amps - Operational Amplifiers |
| PSRR - Power Supply Rejection Ratio | 80 dB |
| Factory Pack Quantity | 500 |
| Subcategory | Amplifier ICs |
| Voltage Gain dB | 106.02 dB |
For more information, please refer to datasheet
Documents
| LF356H Datasheet |
More Information
The LF356-MIL device are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
