Texas Instruments
LF356M/NOPB
LF356M/NOPB
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LF356M/NOPB Texas Instruments - Yeehing Electronics
Single, 36-V, 5-MHz, high slew rate (12-V/µs), In to V+, JFET-input operational amplifier
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.766 |
| 100 — 249 | 0.589 |
| 250 — 999 | 0.434 |
| 1,000 + | 0.22 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | Operational Amplifiers - Op Amps |
| RoHS | Y |
| Mounting Style | SMD/SMT |
| Package / Case | SOIC-8 |
| Supply Voltage - Max | 36 V |
| Number of Channels | 1 Channel |
| GBP - Gain Bandwidth Product | 5 MHz |
| SR - Slew Rate | 12 V/us |
| CMRR - Common Mode Rejection Ratio | 80 dB to 100 dB |
| Ib - Input Bias Current | 50 pA |
| Vos - Input Offset Voltage | 10 mV |
| Supply Voltage - Min | 10 V |
| Operating Supply Current | 5 mA |
| Minimum Operating Temperature | 0 C |
| Maximum Operating Temperature | + 70 C |
| Shutdown | No Shutdown |
| Series | LF356 |
| Packaging | Tube |
| Height | 1.45 mm |
| Input Type | Rail-to-Rail |
| Length | 4.9 mm |
| Product | Operational Amplifiers |
| Supply Type | Dual |
| Technology | BiFET |
| Width | 3.9 mm |
| Brand | Texas Instruments |
| en - Input Voltage Noise Density | 15 nV/sqrt Hz at +/- 15 V |
| In - Input Noise Current Density | 0.01 pA/sqrt Hz |
| Maximum Dual Supply Voltage | +/- 18 V |
| Minimum Dual Supply Voltage | +/- 5 V |
| Operating Supply Voltage | 10 V to 36 V, +/- 5 V to +/- 18 V |
| Pd - Power Dissipation | 380 mW |
| Product Type | Op Amps - Operational Amplifiers |
| PSRR - Power Supply Rejection Ratio | 80 dB |
| Factory Pack Quantity | 95 |
| Subcategory | Amplifier ICs |
| Vcm - Common Mode Voltage | 10 V to 36 V |
| Voltage Gain dB | 106.02 dB |
| Unit Weight | 0.006596 oz |
For more information, please refer to datasheet
Documents
| LF356M/NOPB Datasheet |
More Information
The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
