LF356M/NOPB


YeeHing #: Y001-LF356M/NOPB
Inventory: 3600

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Description

LF356M/NOPB Texas Instruments - Yeehing Electronics

Single, 36-V, 5-MHz, high slew rate (12-V/µs), In to V+, JFET-input operational amplifier

Pricing (USD)

Quantity Unit Price
1 — 99 0.766
100 — 249 0.589
250 — 999 0.434
1,000 + 0.22

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category Operational Amplifiers - Op Amps
RoHS Y
Mounting Style SMD/SMT
Package / Case SOIC-8
Supply Voltage - Max 36 V
Number of Channels 1 Channel
GBP - Gain Bandwidth Product 5 MHz
SR - Slew Rate 12 V/us
CMRR - Common Mode Rejection Ratio 80 dB to 100 dB
Ib - Input Bias Current 50 pA
Vos - Input Offset Voltage 10 mV
Supply Voltage - Min 10 V
Operating Supply Current 5 mA
Minimum Operating Temperature 0 C
Maximum Operating Temperature + 70 C
Shutdown No Shutdown
Series LF356
Packaging Tube
Height 1.45 mm
Input Type Rail-to-Rail
Length 4.9 mm
Product Operational Amplifiers
Supply Type Dual
Technology BiFET
Width 3.9 mm
Brand Texas Instruments
en - Input Voltage Noise Density 15 nV/sqrt Hz at +/- 15 V
In - Input Noise Current Density 0.01 pA/sqrt Hz
Maximum Dual Supply Voltage +/- 18 V
Minimum Dual Supply Voltage +/- 5 V
Operating Supply Voltage 10 V to 36 V, +/- 5 V to +/- 18 V
Pd - Power Dissipation 380 mW
Product Type Op Amps - Operational Amplifiers
PSRR - Power Supply Rejection Ratio 80 dB
Factory Pack Quantity 95
Subcategory Amplifier ICs
Vcm - Common Mode Voltage 10 V to 36 V
Voltage Gain dB 106.02 dB
Unit Weight 0.006596 oz

For more information, please refer to datasheet

Documents

LF356M/NOPB Datasheet

More Information

The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

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