LM5104M/NOPB


YeeHing #: Y012-LM5104M/NOPB
Inventory: 5200

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Description

LM5104M/NOPB Texas Instruments - Yeehing Electronics

2-A, 100-V half bridge gate driver with 8-V UVLO and adaptive delay

Pricing (USD)

Quantity Unit Price
1 — 99 2.699
100 — 249 2.365
250 — 999 1.658
1,000 + 0.94

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category Gate Drivers
RoHS Y
Type High Side, Low Side
Mounting Style SMD/SMT
Package / Case SOIC-8
Number of Drivers 2 Driver
Number of Outputs 2 Output
Output Current 1.8 A
Rise Time 600 ns
Fall Time 600 ns
Supply Voltage - Min 9 V
Supply Voltage - Max 14 V
Propagation Delay - Max 56 ns
Operating Supply Current 3 mA
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 125 C
Series LM5104
Packaging Tube
Features Synchronous
Height 1.45 mm
Length 4.9 mm
Operating Temperature Range - 40 C to + 125 C
Technology Si
Width 3.9 mm
Brand Texas Instruments
Logic Type CMOS
Operating Supply Voltage 7.5 V to 14 V
Product Type Gate Drivers
Factory Pack Quantity 95
Subcategory PMIC - Power Management ICs
Unit Weight 0.005044 oz

For more information, please refer to datasheet

Documents

LM5104M/NOPB Datasheet

More Information

The LM5104 High-Voltage Gate Driver is designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck configuration. The floating high-side driver can work with supply voltages up to 100 V. The high-side and low-side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high-voltage diode is provided to charge high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. This device is available in the standard SOIC and the WSON packages.

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