Description
LM5111-3MX/NOPB Texas Instruments - Yeehing Electronics
5-A/3-A dual channel gate driver with active high or low output 4-V UVLO
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 1.837 |
100 — 249 | 1.517 |
250 — 999 | 1.09 |
1,000 + | 0.66 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | Gate Drivers |
RoHS | Y |
Type | Low Side |
Mounting Style | SMD/SMT |
Package / Case | SOIC-8 |
Number of Drivers | 2 Driver |
Number of Outputs | 2 Output |
Output Current | 5 A |
Rise Time | 25 ns |
Fall Time | 25 ns |
Supply Voltage - Min | 3.5 V |
Supply Voltage - Max | 14 V |
Propagation Delay - Max | 40 ns |
Operating Supply Current | 2 mA |
Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 125 C |
Series | LM5111 |
Packaging | Reel |
Features | UVLO Configured to Drive PFET through OUT_A |
Height | 1.45 mm |
Length | 4.9 mm |
Operating Temperature Range | - 40 C to + 125 C |
Technology | Si |
Width | 3.9 mm |
Brand | Texas Instruments |
Logic Type | TTL |
Operating Supply Voltage | 3.5 V to 14 V |
Product Type | Gate Drivers |
Factory Pack Quantity | 2500 |
Subcategory | PMIC - Power Management ICs |
Unit Weight | 0.005044 oz |
For more information, please refer to datasheet
Documents
LM5111-3MX/NOPB Datasheet |
More Information
The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package or the thermally enhanced