LM5112MY/NOPB Texas Instruments - Yeehing Electronics

3-A/7-A single channel gate driver with 4-V UVLO and input ground for split-supply operation

Pricing (USD)

Quantity	Unit Price
1 — 99	1.371
100 — 249	1.132
250 — 999	0.813
1,000 +	0.43

The above prices are for reference only.

Specifications

For more information, please refer to datasheet

Documents

LM5112MY/NOPB Datasheet

More Information

The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.