LM5113QDPRRQ1 Texas Instruments - Yeehing Electronics

Automotive 1.2-A/5-A, 100-V half bridge gate driver for GaNFET

Pricing (USD)

Quantity	Unit Price
1 — 99	3.598
100 — 249	3.152
250 — 999	2.21
1,000 +	1.25

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	Gate Drivers
RoHS	Y
Product	Half-Bridge Drivers
Type	High Side, Low Side
Mounting Style	SMD/SMT
Package / Case	WSON-10
Number of Drivers	2 Driver
Number of Outputs	2 Output
Output Current	5 A
Rise Time	7 ns
Fall Time	3.5 ns
Supply Voltage - Min	4.5 V
Supply Voltage - Max	5.5 V
Operating Supply Current	2 mA
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 125 C
Series	LM5113-Q1
Packaging	Reel
Operating Temperature Range	- 40 C to + 125 C
Technology	Si
Brand	Texas Instruments
Maximum Turn-Off Delay Time	26.5 ns
Maximum Turn-On Delay Time	28 ns
Product Type	Gate Drivers
Factory Pack Quantity	4500
Subcategory	PMIC - Power Management ICs

For more information, please refer to datasheet

Documents

LM5113QDPRRQ1 Datasheet

More Information

The LM5113-Q1 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs in a synchronous buck, boost, or half bridge configuration for automotive applications. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the device are TTL-logic compatible, which can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113-Q1 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.