LM74800QDRRRQ1 Texas Instruments - Yeehing Electronics

3-V to 65-V, automotive ideal diode controller driving back to back NFETs

Pricing (USD)

Quantity	Unit Price
1 — 99	2.58
100 — 249	2.131
250 — 999	1.531
1,000 +	0.82

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Minimum Operating Temperature	-40
Maximum Operating Temperature	125
Factory Pack Quantity	3,000
Package | Pins	WSON (DRR) | 12

For more information, please refer to datasheet

Documents

LM74800QDRRRQ1 Datasheet

More Information

The LM7480x-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and overvoltage protection using HGATE control. The device features an adjustable overvoltage cut-off protection feature. LM7480-Q1 has two variants, LM74800-Q1 and LM74801-Q1. LM74800-Q1 employs reverse current blocking using linear regulation and comparator scheme vs. LM74801-Q1 which supports comparator based scheme. With Common Drain configuration of the power MOSFETs, the mid-point can be utilized for OR-ing designs using an another ideal diode. The LM7480x-Q1 has a maximum voltage rating of 65 V. The loads can be protected from extended overvoltage transients like 200-V Unsuppressed Load Dumps in 24-V Battery systems by configuring the device with external MOSFETs in Common Source topology.