Texas Instruments
LM9061QDRQ1
LM9061QDRQ1
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LM9061QDRQ1 Texas Instruments - Yeehing Electronics
Automotive 7-V to 26-V high side protection controller
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 2.573 |
| 100 — 249 | 2.255 |
| 250 — 999 | 1.581 |
| 1,000 + | 0.89 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | Gate Drivers |
| RoHS | Y |
| Mounting Style | SMD/SMT |
| Package / Case | SOIC-8 |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 125 C |
| Series | LM9061-Q1 |
| Qualification | AEC-Q100 |
| Packaging | Reel |
| Features | Overvoltage Cutoff |
| Height | 1.75 mm |
| Length | 4.9 mm |
| Operating Temperature Range | - 40 C to + 125 C |
| Technology | Si |
| Width | 3.9 mm |
| Brand | Texas Instruments |
| Moisture Sensitive | Yes |
| Product Type | Gate Drivers |
| Factory Pack Quantity | 2500 |
| Subcategory | PMIC - Power Management ICs |
| Unit Weight | 0.002677 oz |
For more information, please refer to datasheet
Documents
| LM9061QDRQ1 Datasheet |
More Information
The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCC supply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.
