LMG1205YFXR


YeeHing #: Y012-LMG1205YFXR
Inventory: 2600

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Description

LMG1205YFXR Texas Instruments - Yeehing Electronics

1.2-A, 5-A 90-V, half bridge gate driver with 5-V UVLO for GaNFET and MOSFET

Pricing (USD)

Quantity Unit Price
1 — 99 2.648
100 — 249 2.32
250 — 999 1.627
1,000 + 0.92

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category Gate Drivers
RoHS Y
Product Half-Bridge Drivers
Type High Side, Low Side
Mounting Style SMD/SMT
Package / Case DSBGA-12
Number of Drivers 2 Driver
Number of Outputs 2 Output
Output Current 5 A
Rise Time 7 ns
Fall Time 3.5 ns
Supply Voltage - Min 4.5 V
Supply Voltage - Max 5.5 V
Operating Supply Current 2 mA
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 125 C
Series LMG1205
Packaging Reel
Operating Temperature Range - 40 C to + 125 C
Technology Si
Brand Texas Instruments
Maximum Turn-Off Delay Time 50 ns
Maximum Turn-On Delay Time 50 ns
Product Type Gate Drivers
Factory Pack Quantity 3000
Subcategory PMIC - Power Management ICs
Unit Weight 0.000120 oz

For more information, please refer to datasheet

Documents

LMG1205YFXR Datasheet

More Information

The LMG1205 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14 V regardless of the VDD voltage. The LMG1205 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

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