LMG1205YFXR Texas Instruments - Yeehing Electronics

1.2-A, 5-A 90-V, half bridge gate driver with 5-V UVLO for GaNFET and MOSFET

Pricing (USD)

Quantity	Unit Price
1 — 99	2.648
100 — 249	2.32
250 — 999	1.627
1,000 +	0.92

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	Gate Drivers
RoHS	Y
Product	Half-Bridge Drivers
Type	High Side, Low Side
Mounting Style	SMD/SMT
Package / Case	DSBGA-12
Number of Drivers	2 Driver
Number of Outputs	2 Output
Output Current	5 A
Rise Time	7 ns
Fall Time	3.5 ns
Supply Voltage - Min	4.5 V
Supply Voltage - Max	5.5 V
Operating Supply Current	2 mA
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 125 C
Series	LMG1205
Packaging	Reel
Operating Temperature Range	- 40 C to + 125 C
Technology	Si
Brand	Texas Instruments
Maximum Turn-Off Delay Time	50 ns
Maximum Turn-On Delay Time	50 ns
Product Type	Gate Drivers
Factory Pack Quantity	3000
Subcategory	PMIC - Power Management ICs
Unit Weight	0.000120 oz

For more information, please refer to datasheet

Documents

LMG1205YFXR Datasheet

More Information

The LMG1205 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14 V regardless of the VDD voltage. The LMG1205 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.