LMG1210RVRR Texas Instruments - Yeehing Electronics

1.5-A, 3-A, 200-V half bridge gate driver, 5-V UVLO and programmable dead-time for GaNFET and MOSFET

Pricing (USD)

Quantity	Unit Price
1 — 99	4.077
100 — 249	3.324
250 — 999	2.613
1,000 +	1.55

The above prices are for reference only.

Specifications

For more information, please refer to datasheet

Documents

LMG1210RVRR Datasheet

More Information

The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency. This part also features an internal LDO which ensures a gate-drive voltage of 5-V regardless of supply voltage.