LMG1210RVRT Texas Instruments - Yeehing Electronics

1.5-A, 3-A, 200-V half bridge gate driver, 5-V UVLO and programmable dead-time for GaNFET and MOSFET

Pricing (USD)

Quantity	Unit Price
1 — 99	4.893
100 — 249	3.989
250 — 999	3.135
1,000 +	1.86

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	Gate Drivers
RoHS	Y
Product	MOSFET Gate Drivers
Type	High Side, Low Side
Mounting Style	SMD/SMT
Package / Case	WQFN-19
Number of Drivers	2 Driver
Number of Outputs	2 Output
Output Current	3 A
Rise Time	0.5 ns
Fall Time	0.5 ns
Supply Voltage - Min	4.75 V
Supply Voltage - Max	18 V
Propagation Delay - Max	20 ns
Operating Supply Current	380 uA
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 125 C
Series	LMG1210
Packaging	Reel
Operating Temperature Range	- 40 C to + 125 C
Output Voltage	5 V
Technology	GaN
Brand	Texas Instruments
Logic Type	TTL
Off Time - Max	18 ns
Maximum Turn-Off Delay Time	18 ns
Maximum Turn-On Delay Time	18 ns
Moisture Sensitive	Yes
Product Type	Gate Drivers
Rds On - Drain-Source Resistance	400 mOhms
Factory Pack Quantity	250
Subcategory	PMIC - Power Management ICs

For more information, please refer to datasheet

Documents

LMG1210RVRT Datasheet

More Information

The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency. This part also features an internal LDO which ensures a gate-drive voltage of 5-V regardless of supply voltage.