Description
LMG3410R150RWHR Texas Instruments - Yeehing Electronics
600-V 150-mΩ GaN with integrated driver and overcurrent protection
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 7.36 |
| 100 — 249 | 6.0 |
| 250 — 999 | 4.716 |
| 1,000 + | 2.80 |
The above prices are for reference only.
Specifications
For more information, please refer to datasheet
Documents
| LMG3410R150RWHR Datasheet |
More Information
The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The inherent advantages of this device over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
