LMG3411R070RWHR Texas Instruments - Yeehing Electronics

600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection

Pricing (USD)

Quantity	Unit Price
1 — 99	9.628
100 — 249	8.41
250 — 999	6.484
1,000 +	4.06

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	Gate Drivers
RoHS	Y
Product	MOSFET Gate Drivers
Type	High Side, Low Side
Mounting Style	SMD/SMT
Package / Case	QFN-32
Number of Drivers	1 Driver
Number of Outputs	1 Output
Rise Time	15 ns
Fall Time	4.2 ns
Supply Voltage - Min	9.5 V
Supply Voltage - Max	18 V
Propagation Delay - Max	36 ns
Operating Supply Current	43 mA
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 125 C
Series	LMG3411R070
Packaging	Reel
Operating Temperature Range	- 40 C to + 125 C
Output Voltage	5 V
Technology	Si
Brand	Texas Instruments
Maximum Turn-Off Delay Time	10 ns
Maximum Turn-On Delay Time	12 ns
Moisture Sensitive	Yes
Product Type	Gate Drivers
Rds On - Drain-Source Resistance	70 mOhms
Factory Pack Quantity	2000
Subcategory	PMIC - Power Management ICs

For more information, please refer to datasheet

Documents

LMG3411R070RWHR Datasheet

More Information

The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.