LMG3411R150RWHT


YeeHing #: Y012-LMG3411R150RWHT
Inventory: 8000

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Description

LMG3411R150RWHT Texas Instruments - Yeehing Electronics

600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection

Pricing (USD)

Quantity Unit Price
1 — 99 8.832
100 — 249 7.2
250 — 999 5.659
1,000 + 3.36

The above prices are for reference only.

Specifications

None

For more information, please refer to datasheet

Documents

LMG3411R150RWHT Datasheet

More Information

The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The inherent advantages of this device over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

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