Texas Instruments
TL082IDRQ1
TL082IDRQ1
Regular price
$0.15 USD
Regular price
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$0.15 USD
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TL082IDRQ1 Texas Instruments - Yeehing Electronics
Automotive-grade, dual, 30-V, 3-MHz, 13-V/µs slew rate, In to V+, JFET-input op amp
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.642 |
| 100 — 249 | 0.494 |
| 250 — 999 | 0.364 |
| 1,000 + | 0.15 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | Operational Amplifiers - Op Amps |
| RoHS | Y |
| Mounting Style | SMD/SMT |
| Package / Case | SOIC-8 |
| Supply Voltage - Max | 36 V |
| Number of Channels | 2 Channel |
| GBP - Gain Bandwidth Product | 3 MHz |
| SR - Slew Rate | 13 V/us |
| CMRR - Common Mode Rejection Ratio | 75 dB to 86 dB |
| Ib - Input Bias Current | 200 pA |
| Vos - Input Offset Voltage | 6 mV |
| Supply Voltage - Min | 7 V |
| Operating Supply Current | 1.4 mA |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 125 C |
| Shutdown | No Shutdown |
| Series | TL082-Q1 |
| Qualification | AEC-Q100 |
| Packaging | Reel |
| Amplifier Type | General Purpose Amplifier |
| Height | 1.58 mm |
| Input Type | Rail-to-Rail |
| Length | 4.9 mm |
| Product | Operational Amplifiers |
| Supply Type | Single, Dual |
| Technology | BiFET |
| Width | 3.91 mm |
| Brand | Texas Instruments |
| Dual Supply Voltage | +/- 5 V, +/- 9 V, +/- 12 V, +/- 15 V |
| en - Input Voltage Noise Density | 18 nV/sqrt Hz |
| In - Input Noise Current Density | 0.01 pA/sqrt Hz |
| Maximum Dual Supply Voltage | +/- 18 V |
| Minimum Dual Supply Voltage | +/- 3.5 V |
| Operating Supply Voltage | 7 V to 36 V, +/- 3.5 V to +/- 18 V |
| Product Type | Op Amps - Operational Amplifiers |
| Factory Pack Quantity | 2500 |
| Subcategory | Amplifier ICs |
| Voltage Gain dB | 106.02 dB |
| Unit Weight | 0.002561 oz |
For more information, please refer to datasheet
Documents
| TL082IDRQ1 Datasheet |
More Information
The TL082 JFET-input operational amplifier incorporates well-matched, high-voltage JFET and bipolar transistors in a monolithic integrated circuit. The device features high slew rates, low input bias and offset currents, and low offset-voltage temperature coefficient.
