Description
TLC2201AMD Texas Instruments - Yeehing Electronics
Low Noise Precision Advanced LinCMOS™ Single Operational Amplifier
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 4.247 |
100 — 249 | 3.462 |
250 — 999 | 2.721 |
1,000 + | 1.62 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | Precision Amplifiers |
RoHS | Y |
Series | TLC2201AM |
Number of Channels | 1 Channel |
GBP - Gain Bandwidth Product | 1.9 MHz |
SR - Slew Rate | 2.5 V/us |
CMRR - Common Mode Rejection Ratio | 90 dB to 110 dB |
Output Current per Channel | 50 mA |
Ib - Input Bias Current | 60 pA |
Vos - Input Offset Voltage | 0.2 mV |
en - Input Voltage Noise Density | 18 nV/sqrt Hz |
Supply Voltage - Max | 16 V |
Supply Voltage - Min | 4.6 V |
Operating Supply Current | 1 mA |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 125 C |
Shutdown | No Shutdown |
Mounting Style | SMD/SMT |
Package / Case | SOIC-8 |
Packaging | Tube |
Amplifier Type | Low Offset Amplifier |
Height | 1.58 mm |
Input Type | Rail-to-Rail |
Length | 4.9 mm |
Output Type | Rail-to-Rail |
Product | Precision Amplifiers |
Supply Type | Single, Dual |
Technology | LinCMOS |
Width | 3.91 mm |
Brand | Texas Instruments |
Dual Supply Voltage | +/- 3 V, +/- 5 V |
In - Input Noise Current Density | 0.0006 pA/sqrt Hz |
Maximum Dual Supply Voltage | +/- 8 V |
Minimum Dual Supply Voltage | +/- 2.3 V |
Operating Supply Voltage | 4.6 V to 16 V, +/- 2.3 V to +/- 8 V |
Pd - Power Dissipation | 725 mW |
Product Type | Precision Amplifiers |
Factory Pack Quantity | 75 |
Subcategory | Amplifier ICs |
Tradename | LinCMOS |
Voltage Gain dB | 109.97 dB |
Unit Weight | 0.002677 oz |
For more information, please refer to datasheet
Documents
TLC2201AMD Datasheet |
More Information
The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOS process. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.