Description
TLC2201IDR Texas Instruments - Yeehing Electronics
Low Noise Precision Rail-To-Rail Output Operational Amplifier
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 3.95 |
| 100 — 249 | 3.221 |
| 250 — 999 | 2.531 |
| 1,000 + | 1.50 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | Precision Amplifiers |
| RoHS | Y |
| Series | TLC2201 |
| Number of Channels | 1 Channel |
| GBP - Gain Bandwidth Product | 1.9 MHz |
| SR - Slew Rate | 2.5 V/us |
| CMRR - Common Mode Rejection Ratio | 90 dB to 110 dB |
| Output Current per Channel | 50 mA |
| Ib - Input Bias Current | 60 pA |
| Vos - Input Offset Voltage | 0.5 mV |
| en - Input Voltage Noise Density | 18 nV/sqrt Hz |
| Supply Voltage - Max | 16 V |
| Supply Voltage - Min | 4.6 V |
| Operating Supply Current | 1 mA |
| Minimum Operating Temperature | 0 C |
| Maximum Operating Temperature | + 70 C |
| Shutdown | No Shutdown |
| Mounting Style | SMD/SMT |
| Package / Case | SOIC-8 |
| Packaging | Reel |
| Amplifier Type | Low Offset Amplifier |
| Height | 1.58 mm |
| Input Type | Rail-to-Rail |
| Length | 4.9 mm |
| Output Type | Rail-to-Rail |
| Product | Precision Amplifiers |
| Supply Type | Single, Dual |
| Technology | LinCMOS |
| Width | 3.91 mm |
| Brand | Texas Instruments |
| Dual Supply Voltage | +/- 3 V, +/- 5 V |
| In - Input Noise Current Density | 0.0006 pA/sqrt Hz |
| Maximum Dual Supply Voltage | +/- 8 V |
| Minimum Dual Supply Voltage | +/- 2.3 V |
| Operating Supply Voltage | 4.6 V to 16 V, +/- 2.3 V to +/- 8 V |
| Pd - Power Dissipation | 725 mW |
| Product Type | Precision Amplifiers |
| Factory Pack Quantity | 2500 |
| Subcategory | Amplifier ICs |
| Tradename | LinCMOS |
| Voltage Gain dB | 109.97 dB |
| Unit Weight | 0.002677 oz |
For more information, please refer to datasheet
Documents
| TLC2201IDR Datasheet |
More Information
The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOS process. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.
