Description
TLC2202CP Texas Instruments - Yeehing Electronics
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 5.903 |
| 100 — 249 | 4.812 |
| 250 — 999 | 3.782 |
| 1,000 + | 2.25 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | Precision Amplifiers |
| RoHS | Y |
| Series | TLC2202 |
| Number of Channels | 2 Channel |
| GBP - Gain Bandwidth Product | 1.9 MHz |
| SR - Slew Rate | 2.7 V/us |
| CMRR - Common Mode Rejection Ratio | 80 dB |
| Output Current per Channel | 50 mA |
| Ib - Input Bias Current | 100 pA |
| Vos - Input Offset Voltage | 1 mV |
| en - Input Voltage Noise Density | 18 nV/sqrt Hz |
| Supply Voltage - Max | 8 V |
| Supply Voltage - Min | 2.3 V |
| Operating Supply Current | 1.3 mA |
| Minimum Operating Temperature | 0 C |
| Maximum Operating Temperature | + 70 C |
| Shutdown | No Shutdown |
| Mounting Style | SMD/SMT |
| Package / Case | SO-8 |
| Packaging | Reel |
| Amplifier Type | Rail to Rail Amplifier |
| Height | 1.95 mm |
| Length | 6.2 mm |
| Output Type | Rail to Rail |
| Product | Precision Amplifiers |
| Supply Type | Single, Dual |
| Technology | LinCMOS |
| Width | 5.3 mm |
| Brand | Texas Instruments |
| Dual Supply Voltage | +/- 3 V, +/- 5 V |
| In - Input Noise Current Density | 0.0006 pA/sqrt Hz |
| Ios - Input Offset Current | 100 pA |
| Maximum Dual Supply Voltage | +/- 8 V |
| Minimum Dual Supply Voltage | +/- 2.3 V |
| Operating Supply Voltage | 4.6 V to 16 V, +/- 2.3 V to +/- 8 V |
| Pd - Power Dissipation | 770 mW |
| Product Type | Precision Amplifiers |
| Factory Pack Quantity | 80 |
| Subcategory | Amplifier ICs |
| Unit Weight | 0.004325 oz |
For more information, please refer to datasheet
Documents
| TLC2202CP Datasheet |
More Information
The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOS process. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.
