TLC271ACD


YeeHing #: Y001-TLC271ACD
Inventory: 6000

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Description

TLC271ACD Texas Instruments - Yeehing Electronics

Single, 16-V, 2-MHz, 5-mV offset voltage, In to V- operational amplifier

Pricing (USD)

Quantity Unit Price
1 — 99 1.04
100 — 249 0.8
250 — 999 0.589
1,000 + 0.34

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category Operational Amplifiers - Op Amps
RoHS Y
Mounting Style SMD/SMT
Package / Case SOIC-8
Supply Voltage - Max 16 V
Number of Channels 1 Channel
GBP - Gain Bandwidth Product 2.2 MHz
SR - Slew Rate 3.6 V/us
CMRR - Common Mode Rejection Ratio 65 dB to 80 dB
Ib - Input Bias Current 60 pA
Vos - Input Offset Voltage 5 mV
Supply Voltage - Min 3 V
Operating Supply Current 675 uA
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C
Shutdown No Shutdown
Series TLC271A
Packaging Reel
Amplifier Type General Purpose Amplifier
Features Shutdown
Height 1.58 mm
Input Type Rail-to-Rail
Length 4.9 mm
Product Operational Amplifiers
Supply Type Single
Technology LinCMOS
Width 3.91 mm
Brand Texas Instruments
en - Input Voltage Noise Density 25 nV/sqrt Hz
Ios - Input Offset Current 60 pA
Operating Supply Voltage 3 V to 16 V
Pd - Power Dissipation 725 mW
Product Type Op Amps - Operational Amplifiers
Factory Pack Quantity 2500
Subcategory Amplifier ICs
Tradename LinCMOS
Vcm - Common Mode Voltage Negative Rail - 0.2 V to Positive Rail - 1 V
Unit Weight 0.002561 oz

For more information, please refer to datasheet

Documents

TLC271ACD Datasheet

More Information

The TLC271 operational amplifier combines a wide range of input offset voltage grades with low offset voltage drift and high input impedance. In addition, the TLC271 offers a bias-select mode that allows the user to select the best combination of power dissipation and ac performance for a particular application. These devices use Texas Instruments silicon-gate LinCMOSTM technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.

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