Description
TLC271CPSR Texas Instruments - Yeehing Electronics
Single, 16-V, 2-MHz, In to V- operational amplifier
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 0.773 |
100 — 249 | 0.595 |
250 — 999 | 0.438 |
1,000 + | 0.22 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | Operational Amplifiers - Op Amps |
RoHS | Y |
Mounting Style | SMD/SMT |
Package / Case | SO-8 |
Supply Voltage - Max | 16 V |
Number of Channels | 1 Channel |
GBP - Gain Bandwidth Product | 2.2 MHz |
SR - Slew Rate | 3.6 V/us |
CMRR - Common Mode Rejection Ratio | 65 dB to 80 dB |
Ib - Input Bias Current | 60 pA |
Vos - Input Offset Voltage | 10 mV |
Supply Voltage - Min | 3 V |
Operating Supply Current | 675 uA |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 125 C |
Shutdown | No Shutdown |
Series | TLC271 |
Packaging | Reel |
Amplifier Type | General Purpose Amplifier |
Features | Shutdown |
Height | 1.95 mm |
Input Type | Rail-to-Rail |
Length | 6.2 mm |
Product | Operational Amplifiers |
Supply Type | Single |
Technology | LinCMOS |
Width | 5.3 mm |
Brand | Texas Instruments |
en - Input Voltage Noise Density | 25 nV/sqrt Hz |
Ios - Input Offset Current | 60 pA |
Operating Supply Voltage | 3 V to 16 V |
Pd - Power Dissipation | 1 W |
Product Type | Op Amps - Operational Amplifiers |
Factory Pack Quantity | 2000 |
Subcategory | Amplifier ICs |
Tradename | LinCMOS |
Vcm - Common Mode Voltage | Negative Rail - 0.2 V to Positive Rail - 1 V |
Unit Weight | 0.004325 oz |
For more information, please refer to datasheet
Documents
TLC271CPSR Datasheet |
More Information
The TLC271 operational amplifier combines a wide range of input offset voltage grades with low offset voltage drift and high input impedance. In addition, the TLC271 offers a bias-select mode that allows the user to select the best combination of power dissipation and ac performance for a particular application. These devices use Texas Instruments silicon-gate LinCMOSTM technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.