TLV2333IDGKR


YeeHing #: Y001-TLV2333IDGKR
Inventory: 4800

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Description

TLV2333IDGKR Texas Instruments - Yeehing Electronics

Dual, 350-kHz, low-noise, RRIO, CMOS operational amplifier for cost-sensitive systems

Pricing (USD)

Quantity Unit Price
1 — 99 1.496
100 — 249 1.236
250 — 999 0.888
1,000 + 0.47

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category Operational Amplifiers - Op Amps
RoHS Y
Mounting Style SMD/SMT
Package / Case VSSOP-8
Supply Voltage - Max 5.5 V
Output Current per Channel 5 mA
Number of Channels 2 Channel
GBP - Gain Bandwidth Product 350 kHz
SR - Slew Rate 0.16 V/us
CMRR - Common Mode Rejection Ratio 106 dB to 130 dB
Ib - Input Bias Current 70 pA
Vos - Input Offset Voltage 0.015 mV
Supply Voltage - Min 1.8 V
Operating Supply Current 17 uA
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 125 C
Shutdown No Shutdown
Series TLV2333
Packaging Reel
Amplifier Type General Purpose
Features Cost Optimized, EMI Hardened, Zero Drift
Input Type Rail-to-Rail
Output Type Rail-to-Rail
Product Operational Amplifiers
Brand Texas Instruments
en - Input Voltage Noise Density 55 nv/sqrt Hz
In - Input Noise Current Density 100 fA/sqrt Hz
Ios - Input Offset Current 140 pA
Product Type Op Amps - Operational Amplifiers
Factory Pack Quantity 2500
Subcategory Amplifier ICs
Unit Weight 0.000935 oz

For more information, please refer to datasheet

Documents

TLV2333IDGKR Datasheet

More Information

The TLVx333 series of CMOS operational amplifiers offer precision performance at a very competitive price. These devices are members of the zero-drift family of amplifiers that uses a proprietary auto-calibration technique to simultaneously provide low offset voltage (15 µV, max) and near-zero drift over time and temperature at only 28 µA (max) of quiescent current. The TLVx333 family features rail-to-rail input and output in addition to near-flat 1/f noise, making this amplifier ideal for many applications and much easier to design into a system. These devices are optimized for low-voltage operation as low as 1.8 V (±0.9 V) and up to 5.5 V (±2.75 V).

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