TLV8811DBVR


YeeHing #: Y001-TLV8811DBVR
Inventory: 8200

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Description

TLV8811DBVR Texas Instruments - Yeehing Electronics

Single 425-nA precision nanopower operational amplifier for cost-optimized systems

Pricing (USD)

Quantity Unit Price
1 — 99 0.565
100 — 249 0.384
250 — 999 0.296
1,000 + 0.14

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category Operational Amplifiers - Op Amps
RoHS Y
Mounting Style SMD/SMT
Package / Case SOT-23-5
Supply Voltage - Max 5.5 V
Output Current per Channel 4.7 mA
Number of Channels 1 Channel
GBP - Gain Bandwidth Product 6 kHz
SR - Slew Rate 0.0015 V/us
CMRR - Common Mode Rejection Ratio 77 dB to 95 dB
Ib - Input Bias Current 100 fA
Vos - Input Offset Voltage 0.55 mV
Supply Voltage - Min 1.7 V
Operating Supply Current 450 nA
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 125 C
Shutdown No Shutdown
Series TLV8811
Packaging Reel
Amplifier Type Precision Operational Amplifier
Features Cost Optimized, EMI Hardened
Input Type Rail-to-Rail
Output Type Rail-to-Rail
Product Precision Amplifiers
Brand Texas Instruments
Development Kit OPAMPEVM
en - Input Voltage Noise Density 450 nV/sqrt Hz
Ios - Input Offset Current 100 fA
Product Type Op Amps - Operational Amplifiers
Factory Pack Quantity 3000
Subcategory Amplifier ICs
Voltage Gain dB 120 dB
Unit Weight 0.000222 oz

For more information, please refer to datasheet

Documents

TLV8811DBVR Datasheet

More Information

The TLV8811 (single) and TLV8812 (dual) family of precision ultra-low-power operational amplifiers are ideal for cost-optimized, “Always ON” sensing applications in battery powered wireless and low power wired equipment. With 6 kHz of bandwidth from 425 nA of quiescent current and a trimmed offset voltage to under 500µV, the TLV881x amplifiers provide high precision while minimizing power consumption in equipment such as CO gas detectors and portable electronic devices where operational battery-life is critical. They also have a CMOS input stage enabling fempto-amp bias currents, thereby reducing IBIAS and IOS errors that would otherwise impact high source impedance sensing applications. Additionally, built-in EMI protection reduces sensitivity to unwanted RF signals from mobile phones, WiFi, radio transmitters, and tag readers.

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