Description
TLV8811DBVT Texas Instruments - Yeehing Electronics
Single 425-nA precision nanopower operational amplifier for cost-optimized systems
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 0.981 |
100 — 249 | 0.754 |
250 — 999 | 0.555 |
1,000 + | 0.28 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | Operational Amplifiers - Op Amps |
RoHS | Y |
Mounting Style | SMD/SMT |
Package / Case | SOT-23-5 |
Supply Voltage - Max | 5.5 V |
Output Current per Channel | 4.7 mA |
Number of Channels | 1 Channel |
GBP - Gain Bandwidth Product | 6 kHz |
SR - Slew Rate | 0.0015 V/us |
CMRR - Common Mode Rejection Ratio | 77 dB to 95 dB |
Ib - Input Bias Current | 100 fA |
Vos - Input Offset Voltage | 0.55 mV |
Supply Voltage - Min | 1.7 V |
Operating Supply Current | 450 nA |
Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 125 C |
Shutdown | No Shutdown |
Series | TLV8811 |
Packaging | Reel |
Amplifier Type | Precision Operational Amplifier |
Features | Cost Optimized, EMI Hardened |
Input Type | Rail-to-Rail |
Output Type | Rail-to-Rail |
Product | Precision Amplifiers |
Brand | Texas Instruments |
Development Kit | OPAMPEVM |
en - Input Voltage Noise Density | 450 nV/sqrt Hz |
Ios - Input Offset Current | 100 fA |
Product Type | Op Amps - Operational Amplifiers |
Factory Pack Quantity | 250 |
Subcategory | Amplifier ICs |
Vcm - Common Mode Voltage | 0 V to 2.4 V |
Voltage Gain dB | 120 dB |
Unit Weight | 0.000222 oz |
For more information, please refer to datasheet
Documents
TLV8811DBVT Datasheet |
More Information
The TLV8811 (single) and TLV8812 (dual) family of precision ultra-low-power operational amplifiers are ideal for cost-optimized, “Always ON” sensing applications in battery powered wireless and low power wired equipment. With 6 kHz of bandwidth from 425 nA of quiescent current and a trimmed offset voltage to under 500µV, the TLV881x amplifiers provide high precision while minimizing power consumption in equipment such as CO gas detectors and portable electronic devices where operational battery-life is critical. They also have a CMOS input stage enabling fempto-amp bias currents, thereby reducing IBIAS and IOS errors that would otherwise impact high source impedance sensing applications. Additionally, built-in EMI protection reduces sensitivity to unwanted RF signals from mobile phones, WiFi, radio transmitters, and tag readers.