Description
TLV8812DGKR Texas Instruments - Yeehing Electronics
Dual 425-nA precision nanopower operational amplifier for cost-optimized systems
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.514 |
| 100 — 249 | 0.395 |
| 250 — 999 | 0.291 |
| 1,000 + | 0.15 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | Precision Amplifiers |
| RoHS | Y |
| Series | TLV8812 |
| Number of Channels | 2 Channel |
| GBP - Gain Bandwidth Product | 6 kHz |
| SR - Slew Rate | 0.0015 V/us |
| CMRR - Common Mode Rejection Ratio | 80 dB to 98 dB |
| Output Current per Channel | 4.7 mA |
| Ib - Input Bias Current | 100 fA |
| Vos - Input Offset Voltage | 0.5 mV |
| en - Input Voltage Noise Density | 450 nV/sqrt Hz |
| Supply Voltage - Max | 5.5 V |
| Supply Voltage - Min | 1.7 V |
| Operating Supply Current | 425 nA |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 125 C |
| Shutdown | No Shutdown |
| Mounting Style | SMD/SMT |
| Package / Case | VSSOP-8 |
| Packaging | Reel |
| Amplifier Type | Precision Amplifier |
| Features | Cost Optimized, EMI Hardened |
| Input Type | Rail-to-Rail |
| Output Type | Rail-to-Rail |
| Product | Operational Amplifiers |
| Brand | Texas Instruments |
| Ios - Input Offset Current | 100 fA |
| Product Type | Precision Amplifiers |
| Factory Pack Quantity | 2500 |
| Subcategory | Amplifier ICs |
| Vcm - Common Mode Voltage | 0 V to 2.4 V |
| Voltage Gain dB | 120 dB |
| Unit Weight | 0.000705 oz |
For more information, please refer to datasheet
Documents
| TLV8812DGKR Datasheet |
More Information
The TLV8811 (single) and TLV8812 (dual) family of precision ultra-low-power operational amplifiers are ideal for cost-optimized, “Always ON” sensing applications in battery powered wireless and low power wired equipment. With 6 kHz of bandwidth from 425 nA of quiescent current and a trimmed offset voltage to under 500µV, the TLV881x amplifiers provide high precision while minimizing power consumption in equipment such as CO gas detectors and portable electronic devices where operational battery-life is critical. They also have a CMOS input stage enabling fempto-amp bias currents, thereby reducing IBIAS and IOS errors that would otherwise impact high source impedance sensing applications. Additionally, built-in EMI protection reduces sensitivity to unwanted RF signals from mobile phones, WiFi, radio transmitters, and tag readers.
