Description
TPIC44L02DB Texas Instruments - Yeehing Electronics
1.2-mA/1.2-mA 4-channel gate driver with low-Duty PWM in Short-, Open-Load, Over-Bat-voltage
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 2.177 |
100 — 249 | 1.798 |
250 — 999 | 1.292 |
1,000 + | 0.68 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | Gate Drivers |
RoHS | Y |
Product | MOSFET Gate Drivers |
Type | Low Side |
Mounting Style | SMD/SMT |
Package / Case | SSOP-24 |
Number of Drivers | 4 Driver |
Output Current | 1.2 mA |
Rise Time | 3.5 us |
Fall Time | 3 us |
Supply Voltage - Min | 4.5 V |
Supply Voltage - Max | 5.5 V |
Operating Supply Current | 2.6 mA |
Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 125 C |
Series | TPIC44L02 |
Packaging | Tube |
Features | Diagnostics, Fault Protection, Pre-FET Driver |
Operating Temperature Range | - 40 C to + 125 C |
Technology | Si |
Brand | Texas Instruments |
Shutdown | Yes |
Maximum Turn-Off Delay Time | 3.5 us |
Maximum Turn-On Delay Time | 4 us |
Operating Supply Voltage | 5 V |
Product Type | Gate Drivers |
Factory Pack Quantity | 60 |
Subcategory | PMIC - Power Management ICs |
Unit Weight | 0.059966 oz |
For more information, please refer to datasheet
Documents
TPIC44L02DB Datasheet |
More Information
The TPIC44L01, TPIC44L02, and TPIC44L03 are low-side predrivers that provide serial and parallel input interfaces to control four external FET power switches such as offered in the TI TPIC family of power arrays. These devices are designed primarily for low-frequency switching, inductive load applications such as solenoids and relays. Fault status for each channel is available in a serial-data format. Each driver channel has independent off-state open-load detection and on-state shorted-load/short-to-battery detection. Battery overvoltage and undervoltage detection and shutdown is provided on the TPIC44L01/L02. On the TPIC44L03 driver, only over-battery voltage shutdown is provided. Each channel also provides inductive-voltage-transient protection for the external FET.