TPS1100DR Texas Instruments - Yeehing Electronics

Single P-channel Enhancement-Mode MOSFET

Pricing (USD)

Quantity	Unit Price
1 — 99	1.086
100 — 249	0.897
250 — 999	0.645
1,000 +	0.34

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	SOIC-8
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	15 V
Id - Continuous Drain Current	1.6 A
Rds On - Drain-Source Resistance	400 mOhms
Vgs - Gate-Source Voltage	2 V, - 15 V
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 125 C
Pd - Power Dissipation	791 mW
Configuration	Single
Channel Mode	Enhancement
Packaging	Reel
Height	1.75 mm
Length	4.9 mm
Product	MOSFET Small Signal
Series	TPS1100
Transistor Type	1 P-Channel
Type	PMOS Switches
Width	3.9 mm
Brand	Texas Instruments
Fall Time	10 ns
Product Type	MOSFET
Rise Time	10 ns
Factory Pack Quantity	2500
Subcategory	MOSFETs
Typical Turn-Off Delay Time	13 ns
Typical Turn-On Delay Time	4.5 ns
Unit Weight	0.002677 oz

For more information, please refer to datasheet

Documents

TPS1100DR Datasheet

More Information

The TPS1100 is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOSTM process. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1100 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on) and excellent ac characteristics (rise time 10 ns typical) make the TPS1100 the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers.