TPS1101DR


YeeHing #: Y012-TPS1101DR
Inventory: 7200

Feel free to reach out to us for more information.
Click the button below to unveil exclusive discounts and delightful surprises.

Description

TPS1101DR Texas Instruments - Yeehing Electronics

Single P-channel Enhancement-Mode MOSFET

Pricing (USD)

Quantity Unit Price
1 — 99 1.631
100 — 249 1.347
250 — 999 0.968
1,000 + 0.51

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS Y
Technology Si
Mounting Style SMD/SMT
Package / Case SOIC-8
Number of Channels 1 Channel
Transistor Polarity P-Channel
Vds - Drain-Source Breakdown Voltage 15 V
Id - Continuous Drain Current 2.3 A
Rds On - Drain-Source Resistance 90 mOhms
Vgs - Gate-Source Voltage 2 V, - 15 V
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 125 C
Pd - Power Dissipation 791 mW
Configuration Single
Channel Mode Enhancement
Packaging Reel
Height 1.75 mm
Length 4.9 mm
Product MOSFET Small Signal
Series TPS1101
Transistor Type 1 P-Channel
Type PMOS Switches
Width 3.9 mm
Brand Texas Instruments
Fall Time 5.5 ns
Product Type MOSFET
Rise Time 5.5 ns
Factory Pack Quantity 2500
Subcategory MOSFETs
Typical Turn-Off Delay Time 19 ns
Typical Turn-On Delay Time 6.5 ns
Unit Weight 0.002677 oz

For more information, please refer to datasheet

Documents

TPS1101DR Datasheet

More Information

The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of the Texas Instruments LinBiCMOSTM

You may also like

Recently viewed