Description
TPS1101DR Texas Instruments - Yeehing Electronics
Single P-channel Enhancement-Mode MOSFET
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 1.631 |
| 100 — 249 | 1.347 |
| 250 — 999 | 0.968 |
| 1,000 + | 0.51 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | SOIC-8 |
| Number of Channels | 1 Channel |
| Transistor Polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | 15 V |
| Id - Continuous Drain Current | 2.3 A |
| Rds On - Drain-Source Resistance | 90 mOhms |
| Vgs - Gate-Source Voltage | 2 V, - 15 V |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 125 C |
| Pd - Power Dissipation | 791 mW |
| Configuration | Single |
| Channel Mode | Enhancement |
| Packaging | Reel |
| Height | 1.75 mm |
| Length | 4.9 mm |
| Product | MOSFET Small Signal |
| Series | TPS1101 |
| Transistor Type | 1 P-Channel |
| Type | PMOS Switches |
| Width | 3.9 mm |
| Brand | Texas Instruments |
| Fall Time | 5.5 ns |
| Product Type | MOSFET |
| Rise Time | 5.5 ns |
| Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 19 ns |
| Typical Turn-On Delay Time | 6.5 ns |
| Unit Weight | 0.002677 oz |
For more information, please refer to datasheet
Documents
| TPS1101DR Datasheet |
More Information
The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of the Texas Instruments LinBiCMOSTM
