Description
TPS1101PWR Texas Instruments - Yeehing Electronics
Single P-channel Enhancement-Mode MOSFET
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 1.552 |
100 — 249 | 1.282 |
250 — 999 | 0.921 |
1,000 + | 0.49 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | MOSFET |
RoHS | Y |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | TSSOP-16 |
Number of Channels | 1 Channel |
Transistor Polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | 15 V |
Id - Continuous Drain Current | 2.18 A |
Rds On - Drain-Source Resistance | 90 mOhms |
Vgs - Gate-Source Voltage | 2 V, - 15 V |
Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 125 C |
Pd - Power Dissipation | 710 mW |
Configuration | Single |
Channel Mode | Enhancement |
Packaging | Reel |
Height | 1.2 mm |
Length | 5 mm |
Product | MOSFET Small Signal |
Series | TPS1101 |
Transistor Type | 1 P-Channel |
Type | PMOS Switches |
Width | 4.4 mm |
Brand | Texas Instruments |
Fall Time | 5.5 ns |
Product Type | MOSFET |
Rise Time | 5.5 ns |
Factory Pack Quantity | 2000 |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 19 ns |
Typical Turn-On Delay Time | 6.5 ns |
Unit Weight | 0.002183 oz |
For more information, please refer to datasheet
Documents
TPS1101PWR Datasheet |
More Information
The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of the Texas Instruments LinBiCMOSTM