TPS1120DR


YeeHing #: Y012-TPS1120DR
Inventory: 5600

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Description

TPS1120DR Texas Instruments - Yeehing Electronics

Dual P-channel Enhancemenent-Mode MOSFET

Pricing (USD)

Quantity Unit Price
1 — 99 1.516
100 — 249 1.252
250 — 999 0.9
1,000 + 0.47

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS Y
Technology Si
Mounting Style SMD/SMT
Package / Case SOIC-8
Number of Channels 2 Channel
Transistor Polarity P-Channel
Vds - Drain-Source Breakdown Voltage 15 V
Id - Continuous Drain Current 1.17 A
Rds On - Drain-Source Resistance 180 mOhms
Vgs - Gate-Source Voltage 2 V, - 15 V
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 125 C
Pd - Power Dissipation 840 mW
Configuration Dual
Channel Mode Enhancement
Packaging Reel
Height 1.75 mm
Length 4.9 mm
Product MOSFET Small Signal
Series TPS1120
Transistor Type 2 P-Channel
Type PMOS Switches
Width 3.9 mm
Brand Texas Instruments
Fall Time 10 ns
Product Type MOSFET
Rise Time 10 ns
Factory Pack Quantity 2500
Subcategory MOSFETs
Typical Turn-Off Delay Time 13 ns
Typical Turn-On Delay Time 4.5 ns
Unit Weight 0.002677 oz

For more information, please refer to datasheet

Documents

TPS1120DR Datasheet

More Information

The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOSTM process, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120 includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in small-outline integrated circuit SOIC packages.

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