TPS2830D Texas Instruments - Yeehing Electronics

2.4-A, 28-V half bridge gate driver with CMOS inputs and enable for non-inverting synchronous buck

Pricing (USD)

Quantity	Unit Price
1 — 99	2.147
100 — 249	1.882
250 — 999	1.319
1,000 +	0.74

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	Gate Drivers
RoHS	Y
Type	High Side, Low Side
Mounting Style	SMD/SMT
Package / Case	SOIC-14
Number of Drivers	2 Driver
Number of Outputs	2 Output
Output Current	2.4 A
Rise Time	50 ns
Fall Time	50 ns
Supply Voltage - Min	4.5 V
Supply Voltage - Max	15 V
Operating Supply Current	3 mA
Pd - Power Dissipation	749 mW
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 125 C
Series	TPS2830
Packaging	Tube
Features	Dead Time Control, Synchronous Rectification
Operating Temperature Range	- 40 C to + 125 C
Technology	Si
Brand	Texas Instruments
Logic Type	CMOS
Operating Supply Voltage	4.5 V to 15 V
Product Type	Gate Drivers
Factory Pack Quantity	50
Subcategory	PMIC - Power Management ICs
Unit Weight	0.004706 oz

For more information, please refer to datasheet

Documents

TPS2830D Datasheet

More Information

The TPS2830 and TPS2831 are MOSFET drivers for synchronous-buck power stages. These devices are ideal for designing a high-performance power supply using switching controllers that do not have MOSFET drivers. The drivers are designed to deliver 2.4-A peak currents into large capacitive loads. The high-side driver can be configured as a ground-reference driver or as a floating bootstrap driver. An adaptive dead-time control circuit eliminates shoot-through currents through the main power FETs during switching transitions, providing higher efficiency for the buck regulator. The TPS2830/31 drivers have additional control functions: ENABLE, SYNC, and CROWBAR. Both drivers are off when ENABLE is low. The driver is configured as a nonsynchronous-buck driver, disabling the low side driver when SYNC is low. The CROWBAR function turns on the low-side power FET, overriding the IN signal, for over-voltage protection against faulted high-side power FETs.